ISO 14706:2014

ISO 14706:2014

August 2014
International standard Current

Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

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Main informations

Collections

International ISO standards

Publication date

August 2014

Number of pages

25 p.

Reference

ISO 14706:2014

ICS Codes

71.040.40   Chemical analysis

Print number

1
Sumary
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

Replaced standards (1)
ISO 14706:2000
December 2000
International standard Cancelled
Surface chemicals analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

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