NF ISO 17560
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
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1 Domaine d'application1
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2 Référence normative1
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3 Symboles et termes abrégés1
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4 Principe2
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5 Matériaux de référence2
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6 Appareillage2
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7 Échantillon3
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8 Modes opératoires3
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9 Expression des résultats6
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10 Rapport d'essai7
- Annexe
- Bibliographie10
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