FD ISO/TR 22335

FD ISO/TR 22335

June 2008
Published document Current

Surface chemical analysis - Depth profiling - Measurement of sputtering rate : mesh-replica method using a mechanical stylus profilometer

ISO/TR 22335:2007 describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X‑ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. The Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.The Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.

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Main informations

Collections

National standards and national normative documents

Publication date

June 2008

Number of pages

24 p.

Reference

FD ISO/TR 22335

ICS Codes

71.040.40   Chemical analysis

Classification index

X21-063

Print number

1 - 15/07/2008

International kinship

ISO/TR 22335:2007
Sumary
Surface chemical analysis - Depth profiling - Measurement of sputtering rate : mesh-replica method using a mechanical stylus profilometer

ISO/TR 22335:2007 describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X‑ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. The Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.

The Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.

Table of contents
  • Avant-propos
    iv
  • Introduction
    v
  • 1 Domaine d'application
    1
  • 2 Termes et définitions
    1
  • 3 Symboles et abréviations
    2
  • 4 Principe
    2
  • 5 Mode opératoire
    2
  • 5.1 Création du motif répétitif
    2
  • 5.2 Mesurage de la profondeur du cratère de pulvérisation à l'aide d'un profilomètre à stylet mécanique
    8
  • 5.3 Estimation de la vitesse de pulvérisation
    11
  • 6 Résumé des résultats de l'essai interlaboratoires
    11
  • Annexe A (informative) Géométrie de la surface de l'échantillon et du canon à ions
    12
  • Annexe B (informative) Motifs répétitifs en fonction de la taille de l'ouverture de maille
    15
  • Bibliographie
    18
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