IEC 60747-8:2010
Collections
International IEC standards
Publication date
December 2010
Number of pages
155 p.
Reference
IEC 60747-8:2010
IEC 60747-8:2010
December 2010
International standard
Current
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:- type A: junction-gate type;- type B: insulated-gate depletion (normally on) type;- type C: insulated-gate enhancement (normally off) type.The main changes with respect to the previous edition are listed below.a) "Clause 3 Classification" was moved and added to Clause 1.b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.c) Clause 5, 6 and 7 were amended with necessary additions and deletions.This publication is to be read in conjunction with IEC 60747-1:2006.
Main informations
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Sumary
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
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Replaced standards
(4)
IEC 60747-8-3:1995
April 1995
International standard
Cancelled
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field effect transistors for switching applications
IEC 60747-8-4:2004
September 2004
International standard
Cancelled
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
IEC 60747-8-2:1993
February 1993
International standard
Cancelled
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section two: Blank detail specification for field-effect transistors for case-rated power amplifier applications
IEC 60747-8:2000
December 2000
International standard
Cancelled
S emiconductor devices - Part 8: Field-effect transistors
Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.
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