IEC 62047-16:2015
Collections
International IEC standards
Publication date
March 2015
Number of pages
21 p.
Reference
IEC 62047-16:2015
IEC 62047-16:2015
March 2015
International standard
Current
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 ? to 10 ? in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
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Sumary
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 ? to 10 ? in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 ? to 10 ? in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
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