IEC 62276:2012

Provides specifications for manufacturing piezoelectric single crystal wafers to be used in surface acoustic wave devices. Applies to the manufacture of synthetic quartz, lithium niobate, lithium tantalate, lithium tetraborate, and lanthanum gallium silicate single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave filters and resonators.

IEC 62276:2016 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: - Corrections of Euler angle indications in Table 1 and axis directions in Figure 3. - Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition. - Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.