IEC 62276:2025

IEC 62276:2025

March 2025
International standard Current

Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

IEC 62276:2025 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators.This edition includes the following significant technical changes with respect to the previous edition:a) The terms and definitions, the technical requirements, sampling frequency, test methods and measurement of transmittance, lightness, colour difference for LN and LT have been added in order to meet the needs of industry development;b) The term ?inclusion? (mentioned in 4.13 and 6.10) and its definition have been added because there was no definition for it in Clause 3;c) The specification of LTV and PLTV, and the corresponding description of sampling frequency for LN and LT have been added, because they are the key performance parameters for the wafers;d) The tolerance of Curie temperature specification for LN and LT have been added in order to meet the development requirements of the industry;e) Measurement of thickness, TV5, TTV, LTV and PLTV have been completed, including measurement principle and method of thickness, TV5, TTV, LTV and PLTV.

Main informations

Collections

International IEC standards

Publication date

March 2025

Number of pages

82 p.

Reference

IEC 62276:2025
Sumary
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

IEC 62276:2025 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators.
This edition includes the following significant technical changes with respect to the previous edition:
a) The terms and definitions, the technical requirements, sampling frequency, test methods and measurement of transmittance, lightness, colour difference for LN and LT have been added in order to meet the needs of industry development;
b) The term ?inclusion? (mentioned in 4.13 and 6.10) and its definition have been added because there was no definition for it in Clause 3;
c) The specification of LTV and PLTV, and the corresponding description of sampling frequency for LN and LT have been added, because they are the key performance parameters for the wafers;
d) The tolerance of Curie temperature specification for LN and LT have been added in order to meet the development requirements of the industry;
e) Measurement of thickness, TV5, TTV, LTV and PLTV have been completed, including measurement principle and method of thickness, TV5, TTV, LTV and PLTV.
Replaced standards (1)
IEC 62276:2016
October 2016
International standard Cancelled
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

IEC 62276:2016 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: - Corrections of Euler angle indications in Table 1 and axis directions in Figure 3. - Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition. - Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.

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