IEC PAS 62162:2000

IEC PAS 62162:2000

August 2000
Publicly available specification Cancelled

Field-induced charged-device model test method for electrostatic discharge withstand thresholds of microelectronic components

Describes a uniform method for establishing charged-device model (CDM) electrostatic discharge (ESD) withstand thresholds. All packages semiconductor components, thin film circuits, surface acoustic wave (SAW) components, opto-electronic components, hybrid integrated circuits (HICS), and multi-chip modules (MCMs) containing any of these components are to be evaluated according to this standard. IEC/PAS 62162 will be re-issued in the form of IEC international standard under reference IEC 60748-20.

Main informations

Collections

International IEC standards

Publication date

August 2000

Number of pages

7 p.

Reference

IEC PAS 62162:2000

Print number

1
Sumary
Field-induced charged-device model test method for electrostatic discharge withstand thresholds of microelectronic components

Describes a uniform method for establishing charged-device model (CDM) electrostatic discharge (ESD) withstand thresholds. All packages semiconductor components, thin film circuits, surface acoustic wave (SAW) components, opto-electronic components, hybrid integrated circuits (HICS), and multi-chip modules (MCMs) containing any of these components are to be evaluated according to this standard. IEC/PAS 62162 will be re-issued in the form of IEC international standard under reference IEC 60748-20.
Standard replaced by (1)
IEC 60749-28:2017
March 2017
International standard Cancelled
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

IEC 60749-28:2017(E) establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.

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