IEC PAS 62206:2000
Power and temperature cycling
Aims at determining the ability of a device to withstand alternate exposures at high and low temperature extremes with operating biases periodically applied and removed. It is intended to simulate worst case conditions encountered in typical applications and considered destructive.
Aims at determining the ability of a device to withstand alternate exposures at high and low temperature extremes with operating biases periodically applied and removed. It is intended to simulate worst case conditions encountered in typical applications and considered destructive.
Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.
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