ISO/TS 10867:2019

ISO/TS 10867:2019

December 2019
Technical specification Current

Nanotechnologies - Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

This document gives guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy.It provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNTs in a sample and their relative integrated PL intensities.The method can be expanded to estimate the relative mass concentrations of semi-conducting SWCNTs in a sample from their measured integrated PL intensities and knowledge of their PL cross-sections.

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Main informations

Collections

International ISO standards

Publication date

December 2019

Number of pages

17 p.

Reference

ISO/TS 10867:2019

ICS Codes

07.120   Nanotechnologies

Print number

1
Sumary
Nanotechnologies - Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

This document gives guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy.

It provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNTs in a sample and their relative integrated PL intensities.

The method can be expanded to estimate the relative mass concentrations of semi-conducting SWCNTs in a sample from their measured integrated PL intensities and knowledge of their PL cross-sections.

Replaced standards (1)
ISO/TS 10867:2010
September 2010
Technical specification Cancelled
Nanotechnologies - Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

ISO/TS 10867:2010 provides guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy. ISO/TS 10867:2010 provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNT in a sample and their relative integrated PL intensities. The method can be expanded to estimate relative mass concentrations of semi-conducting SWCNTs in a sample from measured integrated PL intensities and knowledge of their PL cross-sections.

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