IEC 60747-9:1998

IEC 60747-9:1998

August 1998
International standard Cancelled

Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).

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Main informations

Collections

International IEC standards

Publication date

August 1998

Number of pages

51 p.

Reference

IEC 60747-9:1998

Print number

1
Sumary
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
Standard replaced by (1)
IEC 60747-9:2007
September 2007
International standard Cancelled
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

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