IEC 60747-9:2007
Collections
International IEC standards
Publication date
September 2007
Number of pages
117 p.
Reference
IEC 60747-9:2007
IEC 60747-9:2007
September 2007
International standard
Cancelled
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).The major changes with respect to the previous edition are mainly of an editorial nature.
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Sumary
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
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Replaced standards
(2)
IEC 60747-9:1998
August 1998
International standard
Cancelled
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
IEC 60747-9:1998/AMD1:2001
August 2001
International standard
Cancelled
Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Standard replaced by
(1)
IEC 60747-9:2019
November 2019
International standard
Current
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: reverse-blocking IGBT and its related technical contents have been added; reverse-conducting IGBT and its related technical contents have been added; some parts of the previous edition have been amended, combined or deleted.
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