IEC 60891:1987
Procedures for temperature and irradiance corrections to measured I-V characteristics of crystalline silicon photovoltaic devices
Gives procedures that should be followed for temperature and irradiance corrections to the measured I-V characteristics of only crystalline silicon photovoltaic devices.
Gives procedures that should be followed for temperature and irradiance corrections to the measured I-V characteristics of only crystalline silicon photovoltaic devices.
IEC 60891:2009 defines procedures to be followed for temperature and irradiance corrections to the measured I-V (current-voltage) characteristics of photovoltaic devices. It also defines the procedures used to determine factors relevant for these corrections. Requirements for I-V measurement of photovoltaic devices are laid down in IEC 60904-1. The main technical changes with regard the previous edition are as follows: - extends edition 1 translation procedure to irradiance change during I-V measurement; - adds 2 new translation procedures; - revises procedure for determination of temperature coefficients to include PV modules; - defines new procedure for determination of internal series resistance; - defines new procedure for determination of curve correction factor.
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