XP ISO/TS 10867

XP ISO/TS 10867

February 2011
Standard Cancelled

Nanotechnologies - Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

ISO/TS 10867:2010 provides guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy. ISO/TS 10867:2010 provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNT in a sample and their relative integrated PL intensities. The method can be expanded to estimate relative mass concentrations of semi-conducting SWCNTs in a sample from measured integrated PL intensities and knowledge of their PL cross-sections.

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Main informations

Collections

National standards and national normative documents

Publication date

February 2011

Number of pages

23 p.

Reference

XP ISO/TS 10867

ICS Codes

07.120   Nanotechnologies

Classification index

T16-200

Print number

1 - 16/02/2011

International kinship

ISO/TS 10867:2010
Sumary
Nanotechnologies - Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

ISO/TS 10867:2010 provides guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy.

ISO/TS 10867:2010 provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNT in a sample and their relative integrated PL intensities.

The method can be expanded to estimate relative mass concentrations of semi-conducting SWCNTs in a sample from measured integrated PL intensities and knowledge of their PL cross-sections.

Standard replaced by (1)
XP ISO/TS 10867
July 2020
Standard Current
Nanotechnologies - Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

<p>This document gives guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy.</p> <p>It provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNTs in a sample and their relative integrated PL intensities.</p> <p>The method can be expanded to estimate the relative mass concentrations of semi-conducting SWCNTs in a sample from their measured integrated PL intensities and knowledge of their PL cross-sections.</p>

Table of contents
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  • Avant-propos
    iv
  • Introduction
    v
  • 1 Domaine d'application
    1
  • 2 Références normatives
    1
  • 3 Termes et définitions
    1
  • 4 Principes de la photoluminescence dans les nanotubes de carbone mono feuillet (SWCNT)
    2
  • 4.1 Structure des SWCNT
    2
  • 4.2 Structure de bande et pics de photoluminescence (PL)
    3
  • 4.3 Effets des excitons
    5
  • 5 Appareillage pour la spectroscopie de photoluminescence dans le proche infrarouge (NIR-PL)
    5
  • 5.1 Spectromètre NIR-PL
    5
  • 5.2 Source lumineuse
    5
  • 6 Méthodes de préparation des échantillons
    6
  • 6.1 Préparation pour la mesure d'une dispersion de SWCNT dans D20
    6
  • 6.2 Préparation pour la mesure d'un film solide à partir d'une dispersion de SWCNT
    6
  • 7 Modes opératoires de mesure
    7
  • 8 Analyse des données et interprétation des résultats
    7
  • 8.1 Règles empiriques pour la détermination de la structure
    7
  • 8.2 Détermination des indices chiraux des SWCNT semi-conducteurs présents dans un échantillon
    8
  • 9 Incertitudes
    9
  • 10 Rapport d'essai
    9
  • Annexe A (informative) Études de cas
    10
  • Bibliographie
    17
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